 |  | | |
| PartNumber | SIHG33N60E-GE3 | SIHG33N60E-G3 | SIHG33N60E-GE3,G33N60E, |
| Description | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247AC-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 33 A | - | - |
| Rds On Drain Source Resistance | 98 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 103 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 278 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 20.82 mm | - | - |
| Length | 15.87 mm | - | - |
| Series | E | - | - |
| Width | 5.31 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 48 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 43 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 161 ns | - | - |
| Typical Turn On Delay Time | 28 ns | - | - |
| Unit Weight | 1.340411 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHG33N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | |
Vishay |
SIHG33N60E-GE3 | Darlington Transistors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS | |
| SIHG33N60E-G3 | नयाँ र मौलिक | ||
| SIHG33N60E-GE3,G33N60E, | नयाँ र मौलिक | ||
| SIHG33N60E-GE3,SIHG33N60 | नयाँ र मौलिक |