SIHG33N60

SIHG33N60EF-GE3 vs SIHG33N60E-E3 vs SIHG33N60E-GE3

 
PartNumberSIHG33N60EF-GE3SIHG33N60E-E3SIHG33N60E-GE3
DescriptionMOSFET 600V Vds 30V Vgs TO-247ACMOSFET 600V Vds 30V Vgs TO-247ACMOSFET 600V Vds 30V Vgs TO-247AC
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247AC-3TO-247AC-3TO-247AC-3
PackagingTubeReelTube
Height20.82 mm20.82 mm20.82 mm
Length15.87 mm15.87 mm15.87 mm
SeriesEFEE
Width5.31 mm5.31 mm5.31 mm
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity500500500
SubcategoryMOSFETsMOSFETsMOSFETs
Number of Channels-1 Channel1 Channel
Transistor Polarity-N-ChannelN-Channel
Vds Drain Source Breakdown Voltage-600 V600 V
Id Continuous Drain Current-33 A33 A
Rds On Drain Source Resistance-98 mOhms98 mOhms
Vgs th Gate Source Threshold Voltage-4 V4 V
Vgs Gate Source Voltage-30 V30 V
Qg Gate Charge-103 nC103 nC
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Pd Power Dissipation-278 W278 W
Configuration-SingleSingle
Channel Mode-EnhancementEnhancement
Fall Time-48 ns48 ns
Rise Time-43 ns43 ns
Typical Turn Off Delay Time-161 ns161 ns
Typical Turn On Delay Time-28 ns28 ns
Part # Aliases-SIHG33N60E-
Unit Weight-1.340411 oz1.340411 oz
निर्माता भाग # विवरण RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHG33N60EF-GE3 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG33N60E-E3 MOSFET 600V Vds 30V Vgs TO-247AC
SIHG33N60E-GE3 MOSFET 600V Vds 30V Vgs TO-247AC
Vishay
Vishay
SIHG33N60E-GE3 Darlington Transistors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
SIHG33N60EF-GE3 IGBT Transistors MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET
SIHG33N60E-E3 MOSFET N-CH 600V 33A TO247AC
SIHG33N60E नयाँ र मौलिक
SIHG33N60E-G3 नयाँ र मौलिक
SIHG33N60E-GE3,G33N60E, नयाँ र मौलिक
SIHG33N60E-GE3,SIHG33N60 नयाँ र मौलिक
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