PartNumber | SIHG33N60EF-GE3 | SIHG33N60E-E3 | SIHG33N60E-GE3 |
Description | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
Packaging | Tube | Reel | Tube |
Height | 20.82 mm | 20.82 mm | 20.82 mm |
Length | 15.87 mm | 15.87 mm | 15.87 mm |
Series | EF | E | E |
Width | 5.31 mm | 5.31 mm | 5.31 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 600 V | 600 V |
Id Continuous Drain Current | - | 33 A | 33 A |
Rds On Drain Source Resistance | - | 98 mOhms | 98 mOhms |
Vgs th Gate Source Threshold Voltage | - | 4 V | 4 V |
Vgs Gate Source Voltage | - | 30 V | 30 V |
Qg Gate Charge | - | 103 nC | 103 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 278 W | 278 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Fall Time | - | 48 ns | 48 ns |
Rise Time | - | 43 ns | 43 ns |
Typical Turn Off Delay Time | - | 161 ns | 161 ns |
Typical Turn On Delay Time | - | 28 ns | 28 ns |
Part # Aliases | - | SIHG33N60E | - |
Unit Weight | - | 1.340411 oz | 1.340411 oz |