PartNumber | SIHG22N60E-E3 | SIHG22N60E-GE3 | SIHG22N60EF-GE3 |
Description | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 21 A | 21 A | 19 A |
Rds On Drain Source Resistance | 180 mOhms | 180 mOhms | 182 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 2 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 57 nC | 57 nC | 96 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 227 W | 227 W | 179 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Series | E | E | EF |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 35 ns | 35 ns | 25 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 27 ns | 27 ns | 21 ns |
Factory Pack Quantity | 500 | 500 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 66 ns | 66 ns | 58 ns |
Typical Turn On Delay Time | 18 ns | 18 ns | 15 ns |
Unit Weight | 1.340411 oz | 1.340411 oz | - |
Height | - | 20.82 mm | - |
Length | - | 15.87 mm | - |
Width | - | 5.31 mm | - |
Transistor Type | - | - | 1 N-Channel |
Forward Transconductance Min | - | - | 5.8 S |