PartNumber | SIHG22N60AEL-GE3 | SIHG22N50D-E3 | SIHG22N50D-GE3 |
Description | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET 500V Vds 30V Vgs TO-247AC | MOSFET 500V Vds 30V Vgs TO-247AC |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 500 V | 500 V |
Id Continuous Drain Current | 21 A | 22 A | 22 A |
Rds On Drain Source Resistance | 180 mOhms | 230 mOhms | 230 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 5 V | 5 V |
Vgs Gate Source Voltage | 10 V | 30 V | 30 V |
Qg Gate Charge | 41 nC | 49 nC | 49 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 208 W | 312 W | 312 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Series | EL | D | D |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 16 S | - | - |
Fall Time | 28 ns | 40 ns | 40 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 24 ns | 42 ns | 42 ns |
Factory Pack Quantity | 1 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 86 ns | 47 ns | 47 ns |
Typical Turn On Delay Time | 27 ns | 21 ns | 21 ns |
Packaging | - | Reel | Tube |
Height | - | 20.82 mm | 20.82 mm |
Length | - | 15.87 mm | 15.87 mm |
Width | - | 5.31 mm | 5.31 mm |
Part # Aliases | - | SIHG22N50D | - |
Unit Weight | - | 1.340411 oz | 1.340411 oz |