 |  | | |
| PartNumber | SIA931DJ-T1-GE3 | SIA929DJ-T1-GE3 | SIA950DJ-T1-GE3 |
| Description | MOSFET -30V Vds 20V Vgs PowerPAK SC-70 | MOSFET -30V Vds 12V Vgs PowerPAK SC-70 | MOSFET RECOMMENDED ALT 781-SIB452DK-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SC70-6 | PowerPAK-SC70-6 | PowerPAK-SC70-6 |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 4.5 A | 4.5 A | - |
| Rds On Drain Source Resistance | 65 mOhms | 52 mOhms, 52 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.1 V | - |
| Vgs Gate Source Voltage | 20 V | 12 V | - |
| Qg Gate Charge | 13 nC | 21 nC, 21 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 7.8 W | 7.8 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 0.75 mm | - | 0.75 mm |
| Length | 2.05 mm | - | 2.05 mm |
| Series | SIA | SIA | SIA |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Width | 2.05 mm | - | 2.05 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 8 S | 10 S, 10 S | - |
| Fall Time | 5 ns | 10 ns, 10 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 18 ns | 18 ns, 18 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17 ns | 22 ns, 22 ns | - |
| Typical Turn On Delay Time | 23 ns | 15 ns, 15 ns | - |
| Part # Aliases | - | SIA929DJ-GE3 | SIA950DJ-GE3 |
| Unit Weight | - | 0.000988 oz | 0.000988 oz |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIAA00DJ-T1-GE3 | MOSFET 25V Vds 16V Vgs PowerPAK SC-70 | |
| SIA931DJ-T1-GE3 | MOSFET -30V Vds 20V Vgs PowerPAK SC-70 | ||
| SIA975DJ-T1-GE3 | MOSFET -12V Vds 8V Vgs PowerPAK SC-70 | ||
| SIAA40DJ-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK SC-70 | ||
| SIA929DJ-T1-GE3 | MOSFET -30V Vds 12V Vgs PowerPAK SC-70 | ||
| SIA950DJ-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIB452DK-T1-GE3 | ||
Vishay |
SIA936EDJ-T1-GE3 | IGBT Transistors MOSFET 20V .034ohm@4.5V 4.5A N-Ch | |
| SIAA00DJ-T1-GE3 | MOSFET N-CHAN 25V | ||
| SIA928DJ-T1-GE3 | MOSFET 2N-CH 30V POWERPAK SC70-6 | ||
| SIA929DJ-T1-GE3 | MOSFET 2P-CH 30V 4.5A SC70-6 | ||
| SIA931DJ-T1-GE3 | MOSFET 2P-CH 30V 4.5A SC70-6L | ||
| SIA950DJ-T1-GE3 | MOSFET 2N-CH 190V 0.95A SC-70-6 | ||
| SIA975DJ-T1-GE3 | MOSFET 2P-CH 12V 4.5A SC-70-6 | ||
| SIAA40DJ-T1-GE3 | MOSFET N-CH 40V 30A SC70-6 | ||
| SIA923EDJ-T4-GE3 | MOSFET P-CH 20V SC-70-6 | ||
| SIA923EDJ-TI-GE3 | नयाँ र मौलिक | ||
| SIA929DJ | नयाँ र मौलिक | ||
| SIA975DJ | नयाँ र मौलिक | ||
| SIA975DJ-T1-GE | नयाँ र मौलिक | ||
| SIAA40DJ | नयाँ र मौलिक | ||
| SIAB FEP | नयाँ र मौलिक | ||
| SIABFEP | नयाँ र मौलिक | ||
| SIAC9200X5 | नयाँ र मौलिक | ||
| SIAC9227XS | नयाँ र मौलिक | ||
| SIAC9708T | नयाँ र मौलिक | ||
| SIAD426 | नयाँ र मौलिक | ||
| SIAD902X01-AP | नयाँ र मौलिक | ||
| SIAE E5S006 | नयाँ र मौलिक | ||
| SIAE-E55006 | नयाँ र मौलिक | ||
| SIAEE55006M8V | नयाँ र मौलिक | ||
| SIAO426C02-SO | नयाँ र मौलिक | ||
| SIAO426COZ-SO | नयाँ र मौलिक | ||
| SIAP/AT75C310 | नयाँ र मौलिक | ||
| SIAP11DJ-T5-E3 | नयाँ र मौलिक | ||
Silicon Labs |
SIAERO+-EVB | BOARD EVAL FOR AERO+ |