| PartNumber | SI7454DP-T1-E3 | SI7454DDP-T1-GE3 | SI7454CDP-T1-GE3 |
| Description | MOSFET 100V, 40 MOHMS@4.5V | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | MOSFET |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | 1.04 mm | 1.04 mm |
| Length | 6.15 mm | 6.15 mm | 6.15 mm |
| Series | SI7 | - | - |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI7454DP-E3 | SI7454CDP-T1-GE3 | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 21 A | - |
| Rds On Drain Source Resistance | - | 27 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 19.5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 29.7 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 19 S | - |
| Fall Time | - | 9 ns | - |
| Rise Time | - | 13 ns | - |
| Typical Turn Off Delay Time | - | 16 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |