SI7236D

SI7236DP-T1-GE3 vs SI7236DP-T1-E3 vs SI7236DP

 
PartNumberSI7236DP-T1-GE3SI7236DP-T1-E3SI7236DP
DescriptionMOSFET RECOMMENDED ALT 781-SIR800DP-T1-GE3RF Bipolar Transistors MOSFET 20V 60A 46W
ManufacturerVishayVishay Siliconix-
Product CategoryMOSFETFETs - Arrays-
RoHSE--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8--
TradenameTrenchFET--
PackagingReelTape & Reel (TR)-
Height1.04 mm--
Length6.15 mm--
SeriesSI7TrenchFETR-
Width5.15 mm--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSI7236DP-GE3--
Unit Weight0.017870 oz0.017870 oz-
Part Aliases-SI7236DP-E3-
Package Case-PowerPAKR SO-8 Dual-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Number of Channels-2 Channel-
Supplier Device Package-PowerPAKR SO-8 Dual-
Configuration-Dual-
FET Type-2 N-Channel (Dual)-
Power Max-46W-
Transistor Type-2 N-Channel-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-4000pF @ 10V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-60A-
Rds On Max Id Vgs-5.2 mOhm @ 20.7A, 4.5V-
Vgs th Max Id-1.5V @ 250μA-
Gate Charge Qg Vgs-105nC @ 10V-
Pd Power Dissipation-3.5 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Fall Time-22 ns 10 ns-
Rise Time-100 ns 15 ns-
Vgs Gate Source Voltage-12 V-
Id Continuous Drain Current-20.7 A-
Vds Drain Source Breakdown Voltage-20 V-
Rds On Drain Source Resistance-5.2 mOhms-
Transistor Polarity-N-Channel-
Typical Turn Off Delay Time-80 ns 60 ns-
Typical Turn On Delay Time-30 ns 10 ns-
Channel Mode-Enhancement-
निर्माता भाग # विवरण RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7236DP-T1-GE3 MOSFET RECOMMENDED ALT 781-SIR800DP-T1-GE3
Vishay
Vishay
SI7236DP-T1-E3 RF Bipolar Transistors MOSFET 20V 60A 46W
SI7236DP-T1-GE3 MOSFET 2N-CH 20V 60A PPAK SO-8
SI7236DP नयाँ र मौलिक
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