| PartNumber | SI4590DY-T1-GE3 | SI4599DY-T1-GE3 |
| Description | MOSFET -100V Vds 20V Vgs SO-8 N&P PAIR | MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 40 V |
| Id Continuous Drain Current | 5.6 A, 3.4 A | 5.8 A, 6.8 A |
| Rds On Drain Source Resistance | 57 mOhms, 183 mOhms | 35.5 mOhms, 45 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.2 V, 1.4 V |
| Vgs Gate Source Voltage | 20 V | 10 V |
| Qg Gate Charge | 11.5 nC, 36 nC | 11.7 nC, 25 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 3.6 W, 4.2 W | 3 W, 3.1 W |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI4 | SI4 |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 9 S, 9.3 S | 14 S, 22 S |
| Fall Time | 12 ns, 25 ns | 9 ns, 9 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 73 ns, 80 ns | 10 ns, 12 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns, 42 ns | 15 ns, 30 ns |
| Typical Turn On Delay Time | 32 ns, 55 ns | 7 ns, 7 ns |
| Unit Weight | 0.017870 oz | 0.019048 oz |
| Height | - | 1.75 mm |
| Length | - | 4.9 mm |
| Width | - | 3.9 mm |
| Part # Aliases | - | SI4599DY-GE3 |