SI4459AD

SI4459ADY-T1-GE3 vs SI4459ADY vs SI4459ADY-T1-E3

 
PartNumberSI4459ADY-T1-GE3SI4459ADYSI4459ADY-T1-E3
DescriptionMOSFET -30V Vds 20V Vgs SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current29 A--
Rds On Drain Source Resistance5 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge129 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation7.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI4--
Transistor Type1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min24 S--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time80 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesSI4459ADY-GE3--
Unit Weight0.006596 oz--
निर्माता भाग # विवरण RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4459ADY-T1-GE3 MOSFET -30V Vds 20V Vgs SO-8
SI4459ADY-T1-GE3-CUT TAPE नयाँ र मौलिक
SI4459ADY नयाँ र मौलिक
SI4459ADY-T1-E3 नयाँ र मौलिक
Vishay
Vishay
SI4459ADY-T1-GE3 MOSFET P-CH 30V 29A 8-SOIC
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