 |  | | |
| PartNumber | SI1016CX-T1-GE3 | SI1016CX | SI1016CX-T1-GE3-CUT TAPE |
| Description | MOSFET 20V Vds 8V Vgs SC89-6 N&P PAIR | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-89-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 350 mA, 500 mA | - | - |
| Rds On Drain Source Resistance | 396 mOhms, 756 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 1.3 nC, 1.65 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 220 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI1 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 1 S, 2 S | - | - |
| Fall Time | 8 ns, 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns, 16 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10 ns, 26 ns | - | - |
| Typical Turn On Delay Time | 9 ns, 11 ns | - | - |
| Unit Weight | 0.000106 oz | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1016CX-T1-GE3 | MOSFET 20V Vds 8V Vgs SC89-6 N&P PAIR | |
| SI1016CX | नयाँ र मौलिक | ||
| SI1016CX-T1-GE3-CUT TAPE | नयाँ र मौलिक | ||
Vishay |
SI1016CX-T1-GE3 | MOSFET N/P-CH 20V SC89-6 |