 | |  | |
| PartNumber | SH8M51GZETB | SH8M5TB1 | SH8M5TB |
| Description | MOSFET 100V NCH+PCH POWER | MOSFET RECOMMENDED ALT 755-SH8M13GZETB | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | Rohm Semiconductor |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOP-8 | SOP-8 | - |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | N-Channel P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 30 V | - |
| Id Continuous Drain Current | 3 A, 2.5 A | 6 A | - |
| Rds On Drain Source Resistance | 170 mOhms, 290 mOhms | 33 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 8.5 nC, 12.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2 W | 2 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | 1 N-Channel 1 P-Channel |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Fall Time | 14 ns, 19 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 50 ns, 75 ns | - | - |
| Typical Turn On Delay Time | 13 ns, 15 ns | - | - |
| Part # Aliases | SH8M51 | - | - |
| Forward Transconductance Min | - | 4 S | - |
| Unit Weight | - | 0.030018 oz | 0.030018 oz |
| Series | - | - | - |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SOP |
| FET Type | - | - | N and P-Channel |
| Power Max | - | - | 2W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 520pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 6A, 7A |
| Rds On Max Id Vgs | - | - | 30 mOhm @ 6A, 10V |
| Vgs th Max Id | - | - | 2.5V @ 1mA |
| Gate Charge Qg Vgs | - | - | 7.2nC @ 5V |
| Pd Power Dissipation | - | - | 2 W |
| Id Continuous Drain Current | - | - | 6 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 33 mOhms |
| Forward Transconductance Min | - | - | 4 S |