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| PartNumber | RQ1C075UN | RQ1C075UN TR | RQ1C075UN. |
| Description | |||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Series | RQ1C075UN | - | - |
| Packaging | Reel | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TSMT-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | 1 N-Channel ESD | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 85 ns | - | - |
| Rise Time | 50 ns | - | - |
| Vgs Gate Source Voltage | +/- 10 V | - | - |
| Id Continuous Drain Current | 7.5 A | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Vgs th Gate Source Threshold Voltage | 300 mV | - | - |
| Rds On Drain Source Resistance | 40 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 100 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Qg Gate Charge | 18 nC | - | - |
| Forward Transconductance Min | 7 S | - | - |
| Channel Mode | Enhancement | - | - |