 |  | | |
| PartNumber | RN2101,LF(CT | RN2101MFV,L3F | RN2101MFV(TPL3) |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor with Built-in Transistor | Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 4.7kohm | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Series | RN2101CT | RN2101MFV | RN2101MFV |
| Packaging | Reel | Reel | Reel |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 3000 | 8000 | 8000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000085 oz | 0.000053 oz | - |
| Configuration | - | Single | Single |
| Transistor Polarity | - | PNP | PNP |
| Typical Input Resistor | - | 4.7 kOhms | 4.7 kOhms |
| Typical Resistor Ratio | - | 1 | 1 |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | SOT-723-3 | - |
| DC Collector/Base Gain hfe Min | - | 30 | 30 |
| Maximum Operating Frequency | - | 250 MHz | - |
| Collector Emitter Voltage VCEO Max | - | - 50 V | 50 V |
| Continuous Collector Current | - | - 100 mA | - 100 mA |
| Peak DC Collector Current | - | - 100 mA | 100 mA |
| Pd Power Dissipation | - | 150 mW | 150 mW |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Emitter Base Voltage VEBO | - | - 10 V | - |
| Channel Mode | - | Enhancement | - |
| Maximum DC Collector Current | - | - 100 mA | - |
| DC Current Gain hFE Max | - | - | 30 |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Toshiba |
RN2101,LF(CT | Bipolar Transistors - Pre-Biased Bias Resistor with Built-in Transistor | |
| RN2101MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 4.7kohm | ||
| RN2102,LF(CT | Bipolar Transistors - Pre-Biased Bias Resistor with Built-in Transistor | ||
| RN2101MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms | ||
| RN2101MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms | ||
Microchip Technology |
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Schaffner |
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| RN2101ACT(TPL3)CT-ND | नयाँ र मौलिक | ||
| RN2101ACT(TPL3)DKR-ND | नयाँ र मौलिक | ||
| RN2101ACT(TPL3)TR-ND | नयाँ र मौलिक | ||
| RN2101CT(TPL3)CT-ND | नयाँ र मौलिक | ||
| RN2101CT(TPL3)DKR-ND | नयाँ र मौलिक | ||
| RN2101CT(TPL3)TR-ND | नयाँ र मौलिक | ||
| RN2101LF(CTCT-ND | नयाँ र मौलिक | ||
| RN2101LF(CTDKR-ND | नयाँ र मौलिक | ||
| RN2101LF(CTTR-ND | नयाँ र मौलिक | ||
| RN2102ACT(TPL3)CT-ND | नयाँ र मौलिक | ||
| RN2102ACT(TPL3)DKR-ND | नयाँ र मौलिक | ||
| RN2102ACT(TPL3)TR-ND | नयाँ र मौलिक | ||
| RN2102CT(TPL3)CT-ND | नयाँ र मौलिक | ||
| RN2102CT(TPL3)DKR-ND | नयाँ र मौलिक | ||
| RN2102CT(TPL3)TR-ND | नयाँ र मौलिक | ||
| RN2102LF(CTCT-ND | नयाँ र मौलिक | ||
| RN2102LF(CTDKR-ND | नयाँ र मौलिक | ||
| RN2102LF(CTTR-ND | नयाँ र मौलिक | ||
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| RN2101MFV(TL3PAV) | नयाँ र मौलिक | ||
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