 |  |  | |
| PartNumber | RN1907FE,LF(CT | RN1907,LF(CT | RN1908FE(TE85L,F) |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=200mW F=250MHz |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | - |
| Transistor Polarity | NPN | NPN | NPN |
| Typical Input Resistor | 10 kOhms | 10 kOhms | 22 kOhms |
| Typical Resistor Ratio | 0.213 | 0.213 | 0.468 |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-563 | SOT-363-6 | ES-6 |
| DC Collector/Base Gain hfe Min | 80 | 80 | 80 |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
| Continuous Collector Current | 100 mA | 100 mA | 100 mA |
| Pd Power Dissipation | 100 mW | 200 mW | 100 mW |
| Series | RN1907 | RN1907 | - |
| Packaging | Reel | Reel | Reel |
| Emitter Base Voltage VEBO | 6 V | 6 V | 7 V |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 4000 | 3000 | 4000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000106 oz | 0.000212 oz | - |
| Configuration | - | - | Dual |
| Maximum Operating Frequency | - | - | 250 MHz |
| Peak DC Collector Current | - | - | 100 mA |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Channel Mode | - | - | Enhancement |
| Maximum DC Collector Current | - | - | 100 mA |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Toshiba |
RN1907FE,LF(CT | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | |
| RN1910,LF(CT | Bipolar Transistors - Pre-Biased BIAS RESISTOR Built- in Transistor 2-in-1 | ||
| RN1909FE(TE85L,F) | Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=200mW F=250MHz | ||
| RN1908FE(TE85L,F) | Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=200mW F=250MHz | ||
| RN1907FE,LF(CT | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto | ||
| RN1907,LF(CT | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto | ||
| RN1908FE | नयाँ र मौलिक | ||
| RN1909 | नयाँ र मौलिक | ||
| RN1907LFCT | नयाँ र मौलिक | ||
| RN1907FELF(CTCT-ND | नयाँ र मौलिक | ||
| RN1907FELF(CTDKR-ND | नयाँ र मौलिक | ||
| RN1907FELF(CTTR-ND | नयाँ र मौलिक | ||
| RN1907LF(CTCT-ND | नयाँ र मौलिक | ||
| RN1907LF(CTDKR-ND | नयाँ र मौलिक | ||
| RN1907LF(CTTR-ND | नयाँ र मौलिक | ||
| RN1907LFCT-ND | नयाँ र मौलिक | ||
| RN1907LFDKR-ND | नयाँ र मौलिक | ||
| RN1907LFTR-ND | नयाँ र मौलिक | ||
| RN1908(T5LFT)CT-ND | नयाँ र मौलिक | ||
| RN1908(T5LFT)DKR-ND | नयाँ र मौलिक | ||
| RN1908(T5LFT)TR-ND | नयाँ र मौलिक | ||
| RN1908FE(TE85LF)CT-ND | नयाँ र मौलिक | ||
| RN1908FE(TE85LF)DKR-ND | नयाँ र मौलिक | ||
| RN1908FE(TE85LF)TR-ND | नयाँ र मौलिक | ||
| RN1909(T5LFT)CT-ND | नयाँ र मौलिक | ||
| RN1909(T5LFT)DKR-ND | नयाँ र मौलिक | ||
| RN1909(T5LFT)TR-ND | नयाँ र मौलिक | ||
| RN1909FE(TE85LF)CT-ND | नयाँ र मौलिक | ||
| RN1909FE(TE85LF)DKR-ND | नयाँ र मौलिक | ||
| RN1909FE(TE85LF)TR-ND | नयाँ र मौलिक | ||
| RN1907FELF(CT | Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW /250M | ||
| RN1907,LF(CTTOSHIBA-CSP1 | नयाँ र मौलिक | ||
| RN1907/XH | नयाँ र मौलिक | ||
| RN1907FETE85L | नयाँ र मौलिक | ||
| RN1907LF(CT | नयाँ र मौलिक | ||
| RN1908/XI | नयाँ र मौलिक | ||
| RN1908T5LEKA | नयाँ र मौलिक | ||
| RN1910 | नयाँ र मौलिक | ||
| RN1910(TE85LF) | नयाँ र मौलिक | ||
| RN1910FE | नयाँ र मौलिक | ||
| RN1909FE | नयाँ र मौलिक | ||
| RN1907FE | नयाँ र मौलिक | ||
| RN1907FE,LF(CB | नयाँ र मौलिक | ||
| RN1908 | नयाँ र मौलिक | ||
| RN1910AFS | नयाँ र मौलिक | ||
| RN1910AFS(TL3EKA,E | नयाँ र मौलिक | ||
| RN1908(TE85L) SOT363-X | नयाँ र मौलिक | ||
| RN1908-TE85L | नयाँ र मौलिक | ||
| RN1910AFS(TL3EKA,E) | नयाँ र मौलिक | ||
| RN1910AFS(TPL3) | नयाँ र मौलिक |