RN1

RN1130MFV,L3F vs RN1131MFV(TL3,T) vs RN1130MFV(TPL3)

 
PartNumberRN1130MFV,L3FRN1131MFV(TL3,T)RN1130MFV(TPL3)
DescriptionBipolar Transistors - Pre-Biased Bias Resistor Built-in TransistorBipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEOBipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 100Kohms
ManufacturerToshibaToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYYN
ConfigurationSingleSingleSingle
Transistor PolarityNPNNPNNPN
Typical Input Resistor100 kOhms100 kOhms100 kOhms
Typical Resistor Ratio1-1
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-723-3SOT-723VESM-3
DC Collector/Base Gain hfe Min100120100
Maximum Operating Frequency250 MHz--
Collector Emitter Voltage VCEO Max50 V50 V50 V
Continuous Collector Current100 mA100 mA100 mA
Pd Power Dissipation150 mW150 mW150 mW
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesRN1130MFVRN1131MFVRN1130MFV
PackagingReelReelReel
Emitter Base Voltage VEBO10 V5 V10 V
BrandToshibaToshibaToshiba
Number of Channels1 Channel--
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity800080008000
SubcategoryTransistorsTransistorsTransistors
Maximum DC Collector Current-100 mA-
Peak DC Collector Current--100 mA
Minimum Operating Temperature--- 65 C
Collector Base Voltage VCBO--50 V
DC Current Gain hFE Max--100
Height--0.5 mm
Length--1.2 mm
Operating Temperature Range--- 65 C to + 150 C
Type--NPN Epitaxial Silicon Transistor
Width--0.8 mm
  • बाट सुरु गर्नुहोस्
  • RN1 1899
निर्माता भाग # विवरण RFQ
Toshiba
Toshiba
RN1130MFV,L3F Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
RN1132MFV(TPL3) Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 200Kohms x 0ohms
RN1131MFV(TL3,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1132MFV,L3F Bipolar Transistors - Pre-Biased Bias Resistor NPN .1A 50V 200kohm
RN1132MFV(TL3,T) Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 200kohm
RN1131MFV(TPL3) Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 0ohms
RN1130MFV(TPL3) Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 100Kohms
RN1130MFV(TPL3) Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 100Kohms
RN1132MFV(TPL3) Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 200Kohms x 0ohms
RN1131MFV(TL3,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1131MFV(TPL3) Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 0ohms
RN1132MFV,L3F X34 PB-F VESM TRANSISTOR PD 150M
Switchcraft
Switchcraft
RN112BPC Phone Connectors RT ANGLE HIGH D JACK
RN112BPC Phone Connectors RT ANGLE HIGH D JACK
Schaffner
Schaffner
RN112-2-02-1M0 Common Mode Chokes / Filters 2A 1mH 70mOhm Horizontal Choke
RN112-2-02-1M8 Common Mode Chokes / Filters 2A 1.8mH 74mOhm Horizontal Choke
RN112-2-02-1M0 Common Mode Chokes Dual 1mH 10kHz 2A 70mOhm DCR Thru-Hole
RN112-2-02-1M8 Common Mode Chokes Dual 1.8mH 10kHz 2A 74mOhm DCR Thru-Hole
RN112APC Phone Connectors 2C ENCLOSED 1/4"
RN112-4-02 Common Mode Filters / Chokes RN112-4/02
RN112-4-02-0M7 Common Mode Chokes Dual 700uH 10kHz 4A 24mOhm DCR Thru-Hole
RN1130MFVL3XGF नयाँ र मौलिक
RN1130MFVTPL3 नयाँ र मौलिक
RN1130MFVL3FCT-ND नयाँ र मौलिक
RN1130MFVL3FDKR-ND नयाँ र मौलिक
RN1130MFVL3FTR-ND नयाँ र मौलिक
RN1131MFV(TL3T)CT-ND नयाँ र मौलिक
RN1131MFV(TL3T)DKR-ND नयाँ र मौलिक
RN1131MFV(TL3T)TR-ND नयाँ र मौलिक
RN1132MFVL3F-ND नयाँ र मौलिक
RN1121502 नयाँ र मौलिक
RN1120.502 INSTOCK
RN1121202 नयाँ र मौलिक
RN112402 नयाँ र मौलिक
RN112-2/02 RN112-2/02
RN112-2102 नयाँ र मौलिक
RN112-4/02 नयाँ र मौलिक
RN1121.502 नयाँ र मौलिक
RN1130F नयाँ र मौलिक
RN1130MFV TPL3 नयाँ र मौलिक
RN1130MFV(TL3,T) नयाँ र मौलिक
RN1130MFV(TL3T) नयाँ र मौलिक
RN1131MFV(TL3T) नयाँ र मौलिक
RN1132FV नयाँ र मौलिक
RN1132MFV नयाँ र मौलिक
RN1133GQW QFN नयाँ र मौलिक
RN1130MFV नयाँ र मौलिक
RN1131MFV नयाँ र मौलिक
RN1133 नयाँ र मौलिक
RN1133GQW नयाँ र मौलिक
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