 |  | | |
| PartNumber | QPD3601 | QPD3301SB | QPD3800 |
| Description | RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN | ||
| Manufacturer | Qorvo | - | - |
| Product Category | RF JFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | HEMT | - | - |
| Technology | GaN SiC | - | - |
| Gain | 22 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 48 V | - | - |
| Id Continuous Drain Current | 360 mA | - | - |
| Output Power | 364 W | - | - |
| Maximum Drain Gate Voltage | 55 V | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Pd Power Dissipation | 83.5 W | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | NI780-2 | - | - |
| Packaging | Waffle | - | - |
| Configuration | Dual | - | - |
| Operating Frequency | 2.5 GHz to 2.7 GHz | - | - |
| Operating Temperature Range | - 40 C to + 85 C | - | - |
| Series | QPD | - | - |
| Brand | Qorvo | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | Transistors | - | - |
| Vgs th Gate Source Threshold Voltage | - 2.7 V | - | - |
| Part # Aliases | 1130777 | - | - |
