PSMN1R8-30P

PSMN1R8-30PL,127 vs PSMN1R8-30PL/BL vs PSMN1R8-30PL127

 
PartNumberPSMN1R8-30PL,127PSMN1R8-30PL/BLPSMN1R8-30PL127
DescriptionMOSFET N-CHAN 30V 100ANow Nexperia PSMN1R8-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance1.8 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation270 W--
ConfigurationSingle--
PackagingTube--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
निर्माता भाग # विवरण RFQ
Nexperia
Nexperia
PSMN1R8-30PL,127 MOSFET N-CHAN 30V 100A
PSMN1R8-30PL,127 MOSFET N-CH 30V TO220AB
PSMN1R8-30PL/BL नयाँ र मौलिक
PSMN1R8-30PL127 Now Nexperia PSMN1R8-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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