| PartNumber | PBSS3515MB,315 | PBSS3515M,315 |
| Description | Bipolar Transistors - BJT 15 V, 0.5 A PNP low VCEsat transistor | Bipolar Transistors - BJT TRANS BISS TAPE-7 |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DFN-1006B-3 | DFN-1006-3 |
| Transistor Polarity | PNP | PNP |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | - 15 V | - 15 V |
| Collector Base Voltage VCBO | - 15 V | 15 V |
| Emitter Base Voltage VEBO | - 6 V | - 6 V |
| Collector Emitter Saturation Voltage | - 25 mV | - |
| Maximum DC Collector Current | - 1 A | - 1 A |
| Gain Bandwidth Product fT | 280 MHz | 280 MHz |
| Minimum Operating Temperature | - 55 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Packaging | Reel | Reel |
| Brand | Nexperia | Nexperia |
| Continuous Collector Current | - 500 mA | - 500 mA |
| DC Collector/Base Gain hfe Min | 200 | 200 |
| Pd Power Dissipation | 590 mW | 250 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 10000 | 10000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.000024 oz | - |
| RoHS | - | Y |
| DC Current Gain hFE Max | - | 200 at 10 mA, 2 V |
| Height | - | 0.47 mm |
| Length | - | 1.02 mm |
| Width | - | 0.62 mm |
| Part # Aliases | - | PBSS3515M T/R |