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| PartNumber | P60B4EL-5071 | P60B4EL | P60B4SL |
| Description | MOSFET 40V, 60A EETMOS POWER MOSFET | ||
| Manufacturer | Taiwan Semiconductor | Shindengen | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | Details | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | ITO-220-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 40 V | - |
| Id Continuous Drain Current | 7 A | 60 A | - |
| Configuration | Single | Single | - |
| Packaging | Tube | Reel | - |
| Series | TSM7ND60CI | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Taiwan Semiconductor | Shindengen | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Rds On Drain Source Resistance | - | 3.3 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Qg Gate Charge | - | 57 nC | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 4 ns | - |
| Forward Transconductance Min | - | 19 S | - |
| Pd Power Dissipation | - | 62.5 W | - |
| Rise Time | - | 24 ns | - |
| Typical Turn Off Delay Time | - | 22 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |
| Unit Weight | - | 0.139332 oz | - |