NTMS10P02R2

NTMS10P02R2G vs NTMS10P02R2 vs NTMS10P02R2G-CUT TAPE

 
PartNumberNTMS10P02R2GNTMS10P02R2NTMS10P02R2G-CUT TAPE
DescriptionMOSFET 20V 10A P-ChannelMOSFET 20V 10A P-Channel
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOIC-8SOIC-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current8.8 A10 A-
Rds On Drain Source Resistance20 mOhms14 mOhms-
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage2.5 V12 V-
Qg Gate Charge48 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.5 mm1.5 mm-
Length5 mm5 mm-
SeriesNTMS10P02--
Transistor Type1 P-Channel1 P-Channel-
TypeMOSFETMOSFET-
Width4 mm4 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min30 S30 S-
Fall Time110 ns, 125 ns125 ns, 110 ns-
Product TypeMOSFETMOSFET-
Rise Time40 ns, 100 ns100 ns, 40 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time100 ns, 110 ns100 ns, 110 ns-
Typical Turn On Delay Time25 ns25 ns-
Unit Weight0.006596 oz0.006596 oz-
निर्माता भाग # विवरण RFQ
NTMS10P02R2G MOSFET 20V 10A P-Channel
NTMS10P02R2SG नयाँ र मौलिक
NTMS10P02R2G-CUT TAPE नयाँ र मौलिक
ON Semiconductor
ON Semiconductor
NTMS10P02R2 MOSFET 20V 10A P-Channel
NTMS10P02R2 MOSFET P-CH 20V 8.8A 8-SOIC
NTMS10P02R2G MOSFET P-CH 20V 8.8A 8-SOIC
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