NTLGD35

NTLGD3502NT2G vs NTLGD3502NT1G vs NTLGD3502N

 
PartNumberNTLGD3502NT2GNTLGD3502NT1GNTLGD3502N
DescriptionMOSFET NFET DFN 20V 4.6A 3X3 60MMOSFET NFET DFN 20V 4.6A 3X3mm 60M
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDFN-6DFN-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current4.3 A4.3 A-
Rds On Drain Source Resistance60 mOhms60 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.74 W1.74 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.87 mm0.87 mm-
Length3 mm3 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesNTLGD3502N--
Transistor Type2 N-Channel2 N-Channel-
Width3 mm3 mm-
BrandON SemiconductorON Semiconductor-
Fall Time17.5 ns17.5 ns-
Product TypeMOSFETMOSFET-
Rise Time17.5 ns17.5 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time8.6 ns8.6 ns-
Typical Turn On Delay Time7 ns7 ns-
Unit Weight0.000744 oz0.000744 oz-
निर्माता भाग # विवरण RFQ
NTLGD3502NT2G MOSFET NFET DFN 20V 4.6A 3X3 60M
NTLGD3502N नयाँ र मौलिक
ON Semiconductor
ON Semiconductor
NTLGD3502NT1G MOSFET NFET DFN 20V 4.6A 3X3mm 60M
NTLGD3502NT1G MOSFET 2N-CH 20V 4.3A/3.6A 6DFN
NTLGD3502NT2G RF Bipolar Transistors MOSFET NFET DFN 20V 4.6A 3X3 60M
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