NTGD1

NTGD1100LT1G vs NTGD1100LT1 vs NTGD1100LT1G-CUT TAPE

 
PartNumberNTGD1100LT1GNTGD1100LT1NTGD1100LT1G-CUT TAPE
DescriptionMOSFET 8V +/-3.3A P-Channel w/Level ShiftMOSFET N-CHAN 3.3A 8V TSOP6
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSOP-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage8 V--
Id Continuous Drain Current3.3 A--
Rds On Drain Source Resistance55 mOhms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage4.5 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation830 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.94 mm--
Length3 mm--
SeriesNTGD1100L--
Transistor Type1 N-Channel, 1 P-Channel--
TypeMOSFET--
Width1.5 mm--
BrandON Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000705 oz--
  • बाट सुरु गर्नुहोस्
  • NTGD1 3
  • NTGD 20
  • NTG 135
निर्माता भाग # विवरण RFQ
NTGD1100LT1G MOSFET 8V +/-3.3A P-Channel w/Level Shift
NTGD1100LT1G-CUT TAPE नयाँ र मौलिक
ON Semiconductor
ON Semiconductor
NTGD1100LT1 MOSFET N-CHAN 3.3A 8V TSOP6
NTGD1100LT1G MOSFET N/P-CH 8V 3.3A 6-TSOP
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