![]() | |||
| PartNumber | NSS60200LT1G | NSS60200DMTTBG | NSS60200LT1G-CUT TAPE |
| Description | Bipolar Transistors - BJT LO V PNP TRANSISTOR 60V 4.0A | Bipolar Transistors - BJT DUAL 60V 2A LOWVCES AT PNP | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | WDFN-6 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Dual | - |
| Collector Emitter Voltage VCEO Max | 60 V | - 60 V | - |
| Collector Base Voltage VCBO | 80 V | - 60 V | - |
| Emitter Base Voltage VEBO | 7 V | - 6 V | - |
| Maximum DC Collector Current | 2 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | 155 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | NSS60200LT1G | - | - |
| Height | 0.94 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | Reel | - |
| Width | 1.3 mm | - | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| DC Collector/Base Gain hfe Min | 150 | 150 | - |
| Pd Power Dissipation | 540 mW | 1.8 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000282 oz | - | - |
| Collector Emitter Saturation Voltage | - | - 0.365 V | - |
| DC Current Gain hFE Max | - | 230 | - |
| Continuous Collector Current | - | 2 A | - |
| Qualification | - | AEC-Q101 | - |