NSBA123JD

NSBA123JDP6T5G vs NSBA123JDXV6T1G vs NSBA123JDXV6T1

 
PartNumberNSBA123JDP6T5GNSBA123JDXV6T1GNSBA123JDXV6T1
DescriptionBipolar Transistors - Pre-Biased DUAL PBRTBipolar Transistors - Pre-Biased 100mA 50V Dual PNPBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYYN
SeriesNSBA123JDP6--
PackagingReelReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity80004000-
SubcategoryTransistorsTransistorsTransistors
Configuration-DualDual
Transistor Polarity-PNPPNP
Typical Input Resistor-2.2 kOhms2.2 kOhms
Typical Resistor Ratio-0.0470.047
Mounting Style-SMD/SMTSMD/SMT
Package / Case-SOT-563-6SOT-563-6
DC Collector/Base Gain hfe Min-8080
Collector Emitter Voltage VCEO Max-50 V50 V
Continuous Collector Current-- 0.1 A- 0.1 A
Peak DC Collector Current-100 mA100 mA
Pd Power Dissipation-357 mW357 mW
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
DC Current Gain hFE Max-8080
Height-0.55 mm0.55 mm
Length-1.6 mm1.6 mm
Width-1.2 mm1.2 mm
Unit Weight-0.000106 oz0.000106 oz
निर्माता भाग # विवरण RFQ
NSBA123JDXV6T5G Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA123JDP6T5G Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA123JDXV6T5 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
ON Semiconductor
ON Semiconductor
NSBA123JDXV6T1G Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA123JDXV6T1 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA123JDXV6T1 TRANS 2PNP PREBIAS 0.5W SOT563
NSBA123JDXV6T1G TRANS 2PNP PREBIAS 0.5W SOT563
NSBA123JDP6T5G Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA123JDXV6T5G Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Top