 | | | |
| PartNumber | NPT2 | NPT2018 | NPT2020 |
| Description | RF POWER TRANSISTOR | RF POWER TRANSISTOR | |
| Manufacturer | MACOM | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Packaging | Tray | - | - |
| Unit Weight | 0.067412 oz | - | - |
| Mounting Style | Screw | - | - |
| Operating Temperature Range | - 40 C to + 85 C | - | - |
| Package Case | TO-272 | - | - |
| Technology | GaN Si | - | - |
| Configuration | Single | - | - |
| Transistor Type | HEMT | - | - |
| Gain | 14.2 dB | - | - |
| Output Power | 45 W | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Operating Frequency | 2.5 GHz | - | - |
| Id Continuous Drain Current | 14 mA | - | - |
| Vds Drain Source Breakdown Voltage | 160 V | - | - |
| Vgs th Gate Source Threshold Voltage | - 1.8 V | - | - |
| Rds On Drain Source Resistance | 340 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vgs Gate Source Breakdown Voltage | 3 V | - | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
MACOM |
NPT2021 | RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT | |
| NPT2022 | RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT | ||
| NPT25100B | RF JFET Transistors 2.1-2.7GHz 125W Gain 16.5dB GaN | ||
| NPT2 | नयाँ र मौलिक | ||
| NPT2018 | RF POWER TRANSISTOR | ||
| NPT2020 | RF POWER TRANSISTOR | ||
| NPT21011S | नयाँ र मौलिक | ||
| NPT2103S-73_A0ED | नयाँ र मौलिक | ||
| NPT2104S1B(REEL) | नयाँ र मौलिक | ||
| NPT25015 | नयाँ र मौलिक | ||
| NPT250LGBRS | नयाँ र मौलिक | ||
| NPT25100 | नयाँ र मौलिक | ||
| NPT25100B | RF JFET Transistors 2.1-2.7GHz 125W Gain 16.5dB GaN | ||
MACOM |
NPT2010 | RF POWER TRANSISTOR | |
| NPT2019 | RF POWER TRANSISTOR | ||
| NPT2021-SMBPPR | EVAL BOARD FOR NPT2021 | ||
| NPT2022-SMBPPR | EVAL BOARD FOR NPT2022 | ||
| NPT25015D | RF POWER TRANSISTOR | ||
| NPT2022 | RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT | ||
| NPT2021 | RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT |