NPT101 stock, NPT101, NPT1012B

NPT1012B vs NPT1010B vs NPT1010


PartNumber	NPT1012B	NPT1010B	NPT1010
Description	RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN	RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN
Manufacturer	MACOM	MACOM	-
Product Category	RF JFET Transistors	RF JFET Transistors	-
RoHS	Y	Y	-
Transistor Type	HEMT	-	-
Technology	GaN Si	GaN Si	-
Gain	13 dB	-	-
Transistor Polarity	N-Channel	-	-
Vds Drain Source Breakdown Voltage	100 V	-	-
Vgs Gate Source Breakdown Voltage	3 V	-	-
Id Continuous Drain Current	4 mA	-	-
Maximum Operating Temperature	+ 200 C	-	-
Pd Power Dissipation	44 W	-	-
Mounting Style	Screw Mount	-	-
Packaging	Tray	Tray	-
Configuration	Single	-	-
Operating Frequency	4 GHz	-	-
Brand	MACOM	MACOM	-
P1dB Compression Point	43 dBm	-	-
Product Type	RF JFET Transistors	RF JFET Transistors	-
Rds On Drain Source Resistance	440 mOhms	-	-
Factory Pack Quantity	30	25	-
Subcategory	Transistors	Transistors	-
Vgs th Gate Source Threshold Voltage	- 1.8 V	-	-
Unit Weight	0.007760 oz	-	-

Search Part Number : "NPT101", Match & Start with "NPT101" - Total : 7

निर्माता	भाग #	विवरण
MACOM	NPT1012B	RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN
MACOM	NPT1010B	RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN
	NPT1010	नयाँ र मौलिक
	NPT1015	नयाँ र मौलिक
	NPT1015B	GaN Wideband Transisto
MACOM	NPT1012B	RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN
MACOM	NPT1010B	RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN