NGTB15N6

NGTB15N60R2FG vs NGTB15N60S vs NGTB15N60S1

 
PartNumberNGTB15N60R2FGNGTB15N60SNGTB15N60S1
DescriptionIGBT Transistors RC2 IGBT 15A 600V
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.85 V1.7 V1.7 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C24 A30 A30 A
Pd Power Dissipation54 W--
Maximum Operating Temperature+ 175 C--
PackagingTubeTubeTube
Continuous Collector Current Ic Max14 A--
BrandON Semiconductor--
Gate Emitter Leakage Current+/- 100 nA100 nA100 nA
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Unit Weight0.211644 oz0.081130 oz0.081130 oz
Series-NGTB15N60S1NGTB15N60S1
Package Case-TO-220-3TO-220-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-220TO-220
Power Max-117W117W
Reverse Recovery Time trr-270ns270ns
Current Collector Ic Max-30A30A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type-NPTNPT
Current Collector Pulsed Icm-120A120A
Vce on Max Vge Ic-1.7V @ 15V, 15A1.7V @ 15V, 15A
Switching Energy-550μJ (on), 350μJ (off)550μJ (on), 350μJ (off)
Gate Charge-88nC88nC
Td on off 25°C-65ns/170ns65ns/170ns
Test Condition-400V, 15A, 22 Ohm, 15V400V, 15A, 22 Ohm, 15V
Pd Power Dissipation-47 W47 W
Collector Emitter Voltage VCEO Max-600 V600 V
निर्माता भाग # विवरण RFQ
NGTB15N60R2FG IGBT Transistors RC2 IGBT 15A 600V
NGTB15N60S1EG IGBT Transistors 15A 600V IGBT
NGTB15N60S नयाँ र मौलिक
NGTB15N60S1 नयाँ र मौलिक
ON Semiconductor
ON Semiconductor
NGTB15N60EG IGBT Transistors 15A 600V IGBT
NGTB15N60EG IGBT Transistors 15A 600V IGBT
NGTB15N60S1EG IGBT Transistors 15A 600V IGBT
NGTB15N60R2FG IGBT 15A 600V TO220-3
Top