 |  | | |
| PartNumber | NE662M04-EVGA09 | NE662M04-A | NE662M04-EVGA09-A |
| Description | RF Development Tools For NE662M04-A Gain at 900 MHz | RF Bipolar Transistors NPN High Frequency | EVAL BOARD FOR NE662M04 900MHZ |
| Manufacturer | CEL | CEL | CEL |
| Product Category | RF Development Tools | Transistors - Bipolar (BJT) - RF | RF Evaluation and Development Kits, Boards |
| RoHS | N | - | - |
| Brand | CEL | - | - |
| Product Type | RF Development Tools | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Development Tools | - | - |
| Series | - | - | - |
| Packaging | - | Bulk Alternate Packaging | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SOT-343F | - |
| Technology | - | Si | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-343F | - |
| Configuration | - | Single | - |
| Power Max | - | 115mW | - |
| Transistor Type | - | NPN | - |
| Current Collector Ic Max | - | 35mA | - |
| Voltage Collector Emitter Breakdown Max | - | 3.3V | - |
| DC Current Gain hFE Min Ic Vce | - | 50 @ 5mA, 2V | - |
| Frequency Transition | - | 25GHz | - |
| Noise Figure dB Typ f | - | 1.1dB @ 2GHz | - |
| Gain | - | 18dB | - |
| Pd Power Dissipation | - | 0.115 W | - |
| Operating Frequency | - | 25 GHz | - |
| Collector Emitter Voltage VCEO Max | - | 3.3 V | - |
| Transistor Polarity | - | NPN | - |
| Emitter Base Voltage VEBO | - | 1.5 V | - |
| Continuous Collector Current | - | 0.035 A | - |
| DC Collector Base Gain hfe Min | - | 70 | - |
| For Use With Related Products | - | - | NE662M04 |
| Type | - | - | Transistor |
| Frequency | - | - | 900MHz |
| Supplied Contents | - | - | Board |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
CEL |
NE662M04-EVNF19 | RF Development Tools For NE662M04-A Noise Figure at 1.9 GHz | |
| NE662M04-EVNF09 | RF Development Tools For NE662M04-A Noise Figure at 900 MHz | ||
| NE662M04-EVGA09 | RF Development Tools For NE662M04-A Gain at 900 MHz | ||
| NE662M04-T2-A | RF Bipolar Transistors NPN High Frequency | ||
| NE662M04-EVGA19 | RF Development Tools For NE662M04-A Gain at 1.9 GHz | ||
| NE662M04-T2-A | नयाँ र मौलिक | ||
| NE662M04-A | RF Bipolar Transistors NPN High Frequency | ||
| NE662M04-EVGA09-A | EVAL BOARD FOR NE662M04 900MHZ | ||
| NE662M03 | नयाँ र मौलिक | ||
| NE662M03-T1 | नयाँ र मौलिक | ||
| NE662M03-T1-A | नयाँ र मौलिक | ||
| NE662M03T1A | नयाँ र मौलिक | ||
| NE662M04 | RF Bipolar Transistors NPN High Frequency | ||
| NE662M04-T1-A | नयाँ र मौलिक | ||
| NE662M04-T1/T79 | नयाँ र मौलिक | ||
| NE662M04-T2 | नयाँ र मौलिक | ||
| NE662M04-T2-A (T79)(2SC | नयाँ र मौलिक | ||
| NE662M04-T2-A/T79 | नयाँ र मौलिक | ||
| NE662M04-TI | नयाँ र मौलिक | ||
| NE662M16 | RF Bipolar Transistors NPN High Frequency | ||
| NE662M4-T2 | नयाँ र मौलिक |