PartNumber | MTD5P06VT4GV | MTD5P06VT4G | MTD5P06VT4 |
Description | MOSFET Single P-Ch 60V 5A | MOSFET PFET DPAK 60V 5A 450mOhm | MOSFET 60V 5A P-Channel |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | N |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
Id Continuous Drain Current | 5 A | 5 A | 5 A |
Rds On Drain Source Resistance | 340 mOhms | 450 mOhms | 340 mOhms |
Vgs th Gate Source Threshold Voltage | 2.8 V | - | - |
Vgs Gate Source Voltage | 15 V | 15 V | 15 V |
Qg Gate Charge | 12 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 40 W | 2.1 W | 2.1 W |
Configuration | Single | Single | Single |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Forward Transconductance Min | 3.6 S | 3.6 S | 3.6 S |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 2.38 mm | 2.38 mm |
Length | - | 6.73 mm | 6.73 mm |
Series | - | MTD5P06V | - |
Type | - | MOSFET | MOSFET |
Width | - | 6.22 mm | 6.22 mm |
Fall Time | - | 19 ns | 19 ns |
Rise Time | - | 26 ns | 26 ns |
Typical Turn Off Delay Time | - | 17 ns | 17 ns |
Typical Turn On Delay Time | - | 11 ns | 11 ns |
निर्माता | भाग # | विवरण | RFQ |
---|---|---|---|
ON Semiconductor |
MTD5P06VT4GV | MOSFET Single P-Ch 60V 5A | |
MTD5P06VT4G | MOSFET PFET DPAK 60V 5A 450mOhm | ||
MTD5P06VT4 | MOSFET 60V 5A P-Channel | ||
MTD5P06VT4 | MOSFET P-CH 60V 5A DPAK | ||
MTD5P06VT4G | MOSFET P-CH 60V 5A DPAK | ||
MTD5P06VT4GV | MOSFET P-CH 60V 5A DPAK | ||
MTD5010N | SENSOR PHOTODIODE 850NM TO18 | ||
MTD502 | नयाँ र मौलिक | ||
MTD502EF | नयाँ र मौलिक | ||
MTD503X | नयाँ र मौलिक | ||
MTD5052W | SENSOR PHOTODIODE 525NM TO18 | ||
MTD50N03 | नयाँ र मौलिक | ||
MTD50N08Q8 | नयाँ र मौलिक | ||
MTD50N08Q8-0-T3-G | नयाँ र मौलिक | ||
MTD516F | नयाँ र मौलिक | ||
MTD5202CE | नयाँ र मौलिक | ||
MTD55A08FK | नयाँ र मौलिक | ||
MTD55A12FK | नयाँ र मौलिक | ||
MTD55N03 | नयाँ र मौलिक | ||
MTD55N10Q | नयाँ र मौलिक | ||
MTD55N10Q8 | नयाँ र मौलिक | ||
MTD55N10Q8-0-T3-G | नयाँ र मौलिक | ||
MTD5906VT4G | नयाँ र मौलिक | ||
MTD5N05 | 5 A, 50 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | ||
MTD5N05RL | नयाँ र मौलिक | ||
MTD5N05T4G | नयाँ र मौलिक | ||
MTD5N06 | नयाँ र मौलिक | ||
MTD5N06T4 | नयाँ र मौलिक | ||
MTD5N06T4G | नयाँ र मौलिक | ||
MTD5N08LT4G | नयाँ र मौलिक | ||
MTD5N10 | नयाँ र मौलिक | ||
MTD5N10E | नयाँ र मौलिक | ||
MTD5N25E | Power Field-Effect Transistor, 5A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
MTD5N25ET4 | Power Field-Effect Transistor, 5A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
MTD5N25ET4G | नयाँ र मौलिक | ||
MTD5N25T4G | नयाँ र मौलिक | ||
MTD5P06E | MOSFET Transistor, P-Channel, TO-252AA | ||
MTD5P06ET4 | नयाँ र मौलिक | ||
MTD5P06ET4G | नयाँ र मौलिक | ||
MTD5P06V | MOSFET Transistor, P-Channel, TO-252AA | ||
MTD5P06V--T4G | नयाँ र मौलिक | ||
MTD5P06V-03 | नयाँ र मौलिक | ||
MTD5P06V1 | नयाँ र मौलिक | ||
MTD5P06VG | नयाँ र मौलिक |