MT3S16U

MT3S16U(TE85L,F) vs MT3S16U(TE85LF)CT-ND vs MT3S16U

 
PartNumberMT3S16U(TE85L,F)MT3S16U(TE85LF)CT-NDMT3S16U
DescriptionRF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz
ManufacturerToshiba--
Product CategoryRF Bipolar Transistors--
RoHSY--
SeriesMT3S16--
Transistor TypeBipolar--
TechnologySi--
Transistor PolarityNPN--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max5 V--
Emitter Base Voltage VEBO2 V--
Continuous Collector Current60 mA--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 125 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseSC-70-3--
PackagingReel--
Collector Base Voltage VCBO10 V--
DC Current Gain hFE Max140--
Operating Frequency4 GHz (Typ)--
Operating Temperature Range- 55 C to + 125 C--
TypeUHF Band Oscillator and Amplifier--
BrandToshiba--
Pd Power Dissipation100 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000219 oz--
निर्माता भाग # विवरण RFQ
Toshiba
Toshiba
MT3S16U(TE85L,F) RF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz
MT3S16U(TE85LF)CT-ND नयाँ र मौलिक
MT3S16U(TE85LF)DKR-ND नयाँ र मौलिक
MT3S16U(TE85LF)TR-ND नयाँ र मौलिक
MT3S16U नयाँ र मौलिक
MT3S16U(TE85L,F) RF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz
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