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| PartNumber | MMBT5551LT1G | MMBT5551LT3G |
| Description | Bipolar Transistors - BJT 600mA 160V NPN | Bipolar Transistors - BJT 600mA 160V NPN |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 160 V | 160 V |
| Collector Base Voltage VCBO | 140 V | 140 V |
| Emitter Base Voltage VEBO | 6 V | 6 V |
| Collector Emitter Saturation Voltage | 0.15 V | 0.15 V |
| Maximum DC Collector Current | 0.6 A | 0.6 A |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | MMBT5551L | MMBT5551L |
| DC Current Gain hFE Max | 250 | - |
| Height | 0.94 mm | 0.94 mm |
| Length | 2.9 mm | 2.9 mm |
| Packaging | Reel | Reel |
| Width | 1.3 mm | 1.3 mm |
| Brand | ON Semiconductor | ON Semiconductor |
| Continuous Collector Current | 0.6 A | 0.6 A |
| DC Collector/Base Gain hfe Min | 80 | 80 |
| Pd Power Dissipation | 225 mW | 225 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 10000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
ON Semiconductor |
MMBT5551LT1G | Bipolar Transistors - BJT 600mA 160V NPN | |
| MMBT5551LT3G | Bipolar Transistors - BJT 600mA 160V NPN | ||
| MMBT5551LT1G | Bipolar Transistors - BJT 600mA 160V NPN | ||
| MMBT5551LT3G | Bipolar Transistors - BJT 600mA 160V NPN | ||
Diodes Incorporated |
MMBT5551-7-F | Bipolar Transistors - BJT SS NPN 300mW | |
| MMBT5551-7 | Bipolar Transistors - BJT SS NPN 300mW | ||
| MMBT5551-7 | TRANS NPN 160V 0.6A SMD SOT23-3 | ||
| MMBT5551-7-F | Bipolar Transistors - BJT SS NPN 300mW | ||
Micro Commercial Components (MCC) |
MMBT5551-TP | Bipolar Transistors - BJT 600mA 160V | |
| MMBT5551-TP | Bipolar Transistors - BJT 600mA 160V | ||
Comchip Technology |
MMBT5551-G | RF Bipolar Transistors VCEO=160V IC=600mA | |
| MMBT5551-G | RF Bipolar Transistors VCEO=160V IC=600mA | ||
| MMBT5551LT1GMMBT5401LT1G | नयाँ र मौलिक | ||
| MMBT5551 (G1) | नयाँ र मौलिक | ||
| MMBT5551 (HEF:100-200) | नयाँ र मौलिक | ||
| MMBT5551 , MAX6382XR16D3 | नयाँ र मौलिक | ||
| MMBT5551 200-300 G1 | नयाँ र मौलिक | ||
| MMBT5551 NL | नयाँ र मौलिक | ||
| MMBT5551 SOT-23 | नयाँ र मौलिक | ||
| MMBT5551 SOT-23 G1 100-2 | नयाँ र मौलिक | ||
| MMBT5551 SOT-23 G1 200-3 | नयाँ र मौलिक | ||
| MMBT5551-7-F , MAX6105UR | नयाँ र मौलिक | ||
| MMBT5551-B | नयाँ र मौलिक | ||
| MMBT5551-B/HG1B | नयाँ र मौलिक | ||
| MMBT5551-G1T1 | नयाँ र मौलिक | ||
| MMBT5551DW | नयाँ र मौलिक | ||
| MMBT5551DW1T1G | नयाँ र मौलिक | ||
| MMBT5551G-B-AE3-R | नयाँ र मौलिक | ||
| MMBT5551L-B-AE3-R | नयाँ र मौलिक | ||
| MMBT5551LT1 G1 | नयाँ र मौलिक | ||
| MMBT5551LT1 200-300 | नयाँ र मौलिक | ||
| MMBT5551LT1(G1) | नयाँ र मौलिक | ||
| MMBT5551LT1G G1 | नयाँ र मौलिक | ||
| MMBT5551LT1G , MAX6462XR44 | नयाँ र मौलिक | ||
| MMBT5551LT1G(G1) | नयाँ र मौलिक | ||
| MMBT5551LT1G/MMBT5551 | नयाँ र मौलिक | ||
| MMBT5551-T | Bipolar Transistors - BJT 600mA 160V | ||
| MMBT5551LT3 | Bipolar Transistors - BJT 600mA 160V NPN | ||
| MMBT5551LT1-ON | INSTOCK | ||
| MMBT5551 FSC | नयाँ र मौलिक | ||
| MMBT5551LT1G/MMBT5401LT | नयाँ र मौलिक | ||
| MMBT5551-7-F-CUT TAPE | नयाँ र मौलिक | ||
| MMBT5551LT1G-CUT TAPE | नयाँ र मौलिक | ||
| MMBT5551LT3G-CUT TAPE | नयाँ र मौलिक | ||
| MMBT5551 G1 200-300 | नयाँ र मौलिक | ||
| MMBT5551G1 | नयाँ र मौलिक | ||
| MMBT5551L | नयाँ र मौलिक | ||
| MMBT5551LT | नयाँ र मौलिक | ||
| MMBT5551LT1 | Bipolar Transistors - BJT 600mA 160V NPN | ||
| MMBT5551LT1H | SS SOT23 HV XSTR NPN 160V |