 | |  | |
| PartNumber | MJD5731T4G | MJD5731T4 | MJD5731 |
| Description | Bipolar Transistors - BJT 1A 350V 15W PNP | Bipolar Transistors - BJT 1A 350V 15W PNP | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single |
| RoHS | Y | N | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 350 V | 350 V | - |
| Collector Base Voltage VCBO | 5 V | 5 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 1 V | 1 V | 1 V |
| Maximum DC Collector Current | 1 A | 1 A | 1 A |
| Gain Bandwidth Product fT | 10 MHz | 10 MHz | 10 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | MJD5731 | - | MJD5731 |
| Height | 2.38 mm | 2.38 mm | - |
| Length | 6.73 mm | 6.73 mm | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 1 A | 1 A | 1 A |
| DC Collector/Base Gain hfe Min | 30 | 30 | - |
| Pd Power Dissipation | 15 W | 15 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | Transistors | Transistors | - |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | DPAK-3 |
| Power Max | - | - | 1.56W |
| Transistor Type | - | - | PNP |
| Current Collector Ic Max | - | - | 1A |
| Voltage Collector Emitter Breakdown Max | - | - | 350V |
| DC Current Gain hFE Min Ic Vce | - | - | 30 @ 300mA, 10V |
| Vce Saturation Max Ib Ic | - | - | 1V @ 200mA, 1A |
| Current Collector Cutoff Max | - | - | 100μA |
| Frequency Transition | - | - | 10MHz |
| Pd Power Dissipation | - | - | 15 W |
| Collector Emitter Voltage VCEO Max | - | - | 350 V |
| Collector Base Voltage VCBO | - | - | 5 V |
| Emitter Base Voltage VEBO | - | - | 5 V |
| DC Collector Base Gain hfe Min | - | - | 30 |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
| MJD5731T4G | Bipolar Transistors - BJT 1A 350V 15W PNP | ||
| MJD5731 | नयाँ र मौलिक | ||
| MJD5731T4G-CUT TAPE | नयाँ र मौलिक | ||
ON Semiconductor |
MJD5731T4 | Bipolar Transistors - BJT 1A 350V 15W PNP | |
| MJD5731T4 | TRANS PNP 350V 1A DPAK | ||
| MJD5731T4G | Bipolar Transistors - BJT 1A 350V 15W PNP |