| PartNumber | MJB44H11T4G | MJB44H11T4-A | MJB44H11T4 |
| Description | Bipolar Transistors - BJT 8A 80V 50W NPN | Bipolar Transistors - Pre-Biased Automotive-grade low voltage NPN power transistor | Bipolar Transistors - BJT 8A 80V 50W NPN |
| Manufacturer | ON Semiconductor | STMicroelectronics | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - Pre-Biased | Bipolar Transistors - BJT |
| RoHS | Y | Y | N |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | D2PAK-3 | TO-263-3 |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 80 V | - | 80 V |
| Collector Base Voltage VCBO | 5 V | - | 5 V |
| Emitter Base Voltage VEBO | 5 V | - | 5 V |
| Collector Emitter Saturation Voltage | 1 V | - | 1 V |
| Maximum DC Collector Current | 10 A | - | 10 A |
| Gain Bandwidth Product fT | 50 MHz | - | 50 MHz |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | MJB44H11 | MJB44H11T4-A | - |
| Height | 4.83 mm | - | 4.83 mm (Max) |
| Length | 10.29 mm | - | 10.29 mm (Max) |
| Packaging | Reel | Reel | Reel |
| Width | 9.65 mm | - | 9.65 mm (Max) |
| Brand | ON Semiconductor | STMicroelectronics | ON Semiconductor |
| Continuous Collector Current | 10 A | - | 10 A |
| DC Collector/Base Gain hfe Min | 60 | - | 60 |
| Pd Power Dissipation | 50 W | - | 50 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 800 | 1000 | 800 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.050054 oz | 0.079014 oz | - |
| Qualification | - | AEC-Q101 | - |