KSD882YS

KSD882YS vs KSD882YSTSSTU vs KSD882YSTSTU

 
PartNumberKSD882YSKSD882YSTSSTUKSD882YSTSTU
DescriptionBipolar Transistors - BJT NPN Epitaxial SilBipolar Transistors - BJT NPN Epitaxial SilTRANS NPN 30V 3A TO-126
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-126-3TO-126-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max30 V30 V-
Collector Base Voltage VCBO40 V40 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.3 V0.3 V-
Maximum DC Collector Current3 A3 A-
Gain Bandwidth Product fT90 MHz90 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesKSD882--
DC Current Gain hFE Max400400-
Height11 mm11 mm-
Length8 mm8 mm-
PackagingBulkTube-
Width3.25 mm3.25 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current3 A3 A-
DC Collector/Base Gain hfe Min6060-
Pd Power Dissipation10 W10 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity200060-
SubcategoryTransistorsTransistors-
Part # AliasesKSD882YS_NL--
Unit Weight0.026843 oz0.026843 oz-
निर्माता भाग # विवरण RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
KSD882YSTU Bipolar Transistors - BJT NPN Epitaxial Sil
KSD882YS Bipolar Transistors - BJT NPN Epitaxial Sil
KSD882YSTSSTU Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor
ON Semiconductor
KSD882YSTSTU TRANS NPN 30V 3A TO-126
KSD882YS TRANS NPN 30V 3A TO-126
KSD882YSTU TRANS NPN 30V 3A TO-126
KSD882YSTSSTU TRANS NPN 30V 3A TO-126
KSD882YSTU,KSD882-Y,D882 नयाँ र मौलिक
KSD882YS_NL नयाँ र मौलिक
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