![]() | |||
| PartNumber | KSC1008GBU | KSC1008G | KSC1008GTA |
| Description | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Transisto | |
| Manufacturer | ON Semiconductor | - | Fairchild Semiconductor |
| Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-92-3 | - | - |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 8 V | - | - |
| Collector Emitter Saturation Voltage | 0.2 V | - | 0.2 V |
| Maximum DC Collector Current | 0.7 A | - | 0.7 A |
| Gain Bandwidth Product fT | 50 MHz | - | 50 MHz |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| DC Current Gain hFE Max | 400 | - | 400 |
| Height | 5.33 mm | - | - |
| Length | 5.2 mm | - | - |
| Packaging | Bulk | - | Cut Tape (CT) Alternate Packaging |
| Width | 4.19 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 0.7 A | - | 0.7 A |
| DC Collector/Base Gain hfe Min | 40 | - | - |
| Pd Power Dissipation | 800 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.008466 oz | - | 0.008466 oz |
| Series | - | - | - |
| Package Case | - | - | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-92-3 |
| Power Max | - | - | 800mW |
| Transistor Type | - | - | NPN |
| Current Collector Ic Max | - | - | 700mA |
| Voltage Collector Emitter Breakdown Max | - | - | 60V |
| DC Current Gain hFE Min Ic Vce | - | - | 200 @ 500mA, 2V |
| Vce Saturation Max Ib Ic | - | - | 400mV @ 50mA, 500mA |
| Current Collector Cutoff Max | - | - | 100nA (ICBO) |
| Frequency Transition | - | - | 50MHz |
| Pd Power Dissipation | - | - | 0.8 W |
| Collector Emitter Voltage VCEO Max | - | - | 60 V |
| Collector Base Voltage VCBO | - | - | 80 V |
| Emitter Base Voltage VEBO | - | - | 8 V |
| DC Collector Base Gain hfe Min | - | - | 40 |