KSB83

KSB834 vs KSB834-Y vs KSB834-Y-HZ

 
PartNumberKSB834KSB834-YKSB834-Y-HZ
Description
ManufacturerFAI--
Product CategoryTransistors (BJT) - Single--
PackagingReel--
Unit Weight0.046296 oz--
Mounting StyleSMD/SMT--
Package CaseTO-263--
ConfigurationSingle--
Pd Power Dissipation30 W--
Maximum Operating Temperature+ 150 C--
Minimum Operating Temperature- 55 C--
Collector Emitter Voltage VCEO Max- 60 V--
Transistor PolarityPNP--
Collector Emitter Saturation Voltage- 0.5 V--
Collector Base Voltage VCBO- 60 V--
Emitter Base Voltage VEBO- 7 V--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT9 MHz--
Continuous Collector Current- 3 A--
DC Collector Base Gain hfe Min60--
DC Current Gain hFE Max200--
  • बाट सुरु गर्नुहोस्
  • KSB83 14
  • KSB8 33
  • KSB 261
निर्माता भाग # विवरण RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
KSB834WYTM Bipolar Transistors - BJT PNP Epitaxial Sil
KSB834O Bipolar Transistors - BJT PNP Epitaxial Sil
KSB834Y Bipolar Transistors - BJT PNP Epitaxial Sil
KSB834 नयाँ र मौलिक
KSB834-Y नयाँ र मौलिक
KSB834-Y-HZ नयाँ र मौलिक
KSB834-Y-O नयाँ र मौलिक
KSB834-YTU नयाँ र मौलिक
KSB834/D880Y नयाँ र मौलिक
KSB834TU नयाँ र मौलिक
KSB834W नयाँ र मौलिक
KSB834Y-TU नयाँ र मौलिक
KSB834YTU + नयाँ र मौलिक
ON Semiconductor
ON Semiconductor
KSB834O TRANS PNP 60V 3A TO-220
KSB834Y TRANS PNP 60V 3A TO-220
KSB834YTU TRANS PNP 60V 3A TO-220
KSB834WYTM Bipolar Transistors - BJT PNP Epitaxial Sil
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