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| PartNumber | Jan2N2369A | Jan2N2369AUA | JAN2N2369A/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-18-3 | - | TO-206AA-3 |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 15 V | - | 15 V |
| Collector Base Voltage VCBO | 40 V | - | 40 V |
| Emitter Base Voltage VEBO | 4.5 V | - | 4.5 V |
| Collector Emitter Saturation Voltage | 200 mV | - | 0.2 V |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 200 C | - | + 200 C |
| DC Current Gain hFE Max | 120 at 10 mA, 350 VDC | - | 120 at 100 mA, 1 V |
| Packaging | Bulk | Waffle | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 40 at 10 mA, 350 VDC | - | 20 at 100 mA, 1 V |
| Pd Power Dissipation | 360 mW | - | 0.36 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Maximum DC Collector Current | - | - | 0.1 A |