PartNumber | IXXH110N65B4 | IXXH100N60B3 | IXXH100N60C3 |
Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD | IGBT Transistors XPT IGBT B3-Class 600V/210Amp | IGBT Transistors XPT IGBT C3-Class 600V/190Amp |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Product | Power Semiconductor Modules | - | - |
Type | GenX4 | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247AD | TO-247AD |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Packaging | Tube | Tube | Tube |
Configuration | Single | - | - |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | - | - |
Fall Time | 43 ns | - | - |
Id Continuous Drain Current | 250 A | - | - |
Pd Power Dissipation | 880 W | 830 W | 830 W |
Product Type | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
Rise Time | 40 ns | - | - |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
Tradename | XPT | XPT | XPT |
Typical Turn Off Delay Time | 146 ns | - | - |
Typical Turn On Delay Time | 26 ns | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Technology | - | Si | Si |
Collector Emitter Voltage VCEO Max | - | 600 V | 600 V |
Collector Emitter Saturation Voltage | - | 1.8 V | 2.2 V |
Maximum Gate Emitter Voltage | - | 20 V | 20 V |
Continuous Collector Current at 25 C | - | 210 A | 190 A |
Series | - | IXXH100N60 | IXXH100N60 |
Gate Emitter Leakage Current | - | 100 nA | 100 nA |
Unit Weight | - | 0.229281 oz | 0.229281 oz |