| PartNumber | IXTY08N100D2-TRL | IXTY08N100P | IXTY08N100D2 |
| Description | Discrete Semiconductor Modules Depletion Mode MOSFET | MOSFET 0.8 Amps 1000V 20 Rds | MOSFET 8mAmps 1000V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | - | - |
| Type | Depletion Mode | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Reel | Tube | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 48 ns | 34 ns | 48 ns |
| Id Continuous Drain Current | 800 mA | 800 mA | 800 mA |
| Pd Power Dissipation | 60 W | 42 W | 60 W |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Rds On Drain Source Resistance | 21 Ohms | 20 Ohms | 21 Ohms |
| Rise Time | 57 ns | 37 ns | 57 ns |
| Factory Pack Quantity | 2500 | 70 | 70 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 ns | 35 ns | 34 ns |
| Typical Turn On Delay Time | 28 ns | 19 ns | 28 ns |
| Vds Drain Source Breakdown Voltage | 1000 V | 1 kV | 1 kV |
| Vgs th Gate Source Threshold Voltage | - 4 V | - | 2 V |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Channel Mode | - | Enhancement | Depletion |
| Height | - | 2.38 mm | - |
| Length | - | 6.73 mm | - |
| Series | - | IXTY08N100 | IXTY08N100 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Width | - | 6.22 mm | - |
| Unit Weight | - | 0.012346 oz | 0.081130 oz |
| Qg Gate Charge | - | - | 14.6 nC |
| Forward Transconductance Min | - | - | 330 mS |