IXTP13

IXTP130N15X4 vs IXTP130N10T vs IXTP130N065T2

 
PartNumberIXTP130N15X4IXTP130N10TIXTP130N065T2
DescriptionMOSFET DISCMSFT NCH HIPERFET-QCLASSMOSFET MOSFET Id130 BVdass100IGBT Transistors MOSFET 130 Amps 65V
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage150 V100 V-
Id Continuous Drain Current130 A130 A-
Rds On Drain Source Resistance8.5 mOhms8.5 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge87 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation400 W360 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYS-
Fall Time10 ns28 ns-
Product TypeMOSFETMOSFET-
Rise Time27 ns47 ns-
Factory Pack Quantity50500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time100 ns44 ns-
Typical Turn On Delay Time20 ns30 ns-
Packaging-TubeTube
Height-9.15 mm-
Length-10.66 mm-
Series-IXTP130N10IXTP130N065
Width-4.82 mm-
Forward Transconductance Min-93 S-
Unit Weight-0.081130 oz0.081130 oz
Package Case--TO-220-3
Id Continuous Drain Current--130 A
Vds Drain Source Breakdown Voltage--65 V
Rds On Drain Source Resistance--6.6 mOhms
निर्माता भाग # विवरण RFQ
Littelfuse
Littelfuse
IXTP130N15X4 MOSFET DISCMSFT NCH HIPERFET-QCLASS
IXTP130N10T MOSFET MOSFET Id130 BVdass100
IXTP13ON10 नयाँ र मौलिक
IXTP130N10T MOSFET MOSFET Id130 BVdass100
IXTP130N065T2 IGBT Transistors MOSFET 130 Amps 65V
Top