IXTH10P

IXTH10P50P vs IXTH10P50 vs IXTH10P60

 
PartNumberIXTH10P50PIXTH10P50IXTH10P60
DescriptionMOSFET -10.0 Amps -500V 1.000 RdsMOSFET P-CH 500V 10A TO-247ADMOSFET P-CH 600V 10A TO-247AD
ManufacturerIXYSIXYS-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance1 Ohms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge50 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height21.45 mm--
Length16.24 mm--
SeriesIXTH10P50--
Transistor Type1 P-Channel--
TypePolarP Power MOSFET--
Width5.3 mm--
BrandIXYS--
Forward Transconductance Min6.5 S--
Fall Time44 ns--
Product TypeMOSFET--
Rise Time28 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time52 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.229281 oz--
निर्माता भाग # विवरण RFQ
Littelfuse
Littelfuse
IXTH10P50P MOSFET -10.0 Amps -500V 1.000 Rds
IXTH10P50 MOSFET P-CH 500V 10A TO-247AD
IXTH10P60 MOSFET P-CH 600V 10A TO-247AD
IXTH10P50P IGBT Transistors MOSFET -10.0 Amps -500V 1.000 Rds
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