| PartNumber | IXTH1N450HV | IXTH1N250 | IXTH1N300P3HV |
| Description | MOSFET High Voltage Power MOSFET | MOSFET 1 Amps 2500V 40 Rds | MOSFET DISC MOSFET N-CH STD-POLAR3 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247HV-3 |
| Packaging | Tube | Tube | - |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.211644 oz | 0.229281 oz | - |
| RoHS | - | Y | - |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 2.5 kV | 3 kV |
| Id Continuous Drain Current | - | 1.5 A | 1 A |
| Rds On Drain Source Resistance | - | 40 Ohms | 50 Ohms |
| Vgs th Gate Source Threshold Voltage | - | 2 V | 2 V |
| Vgs Gate Source Voltage | - | 10 V | 20 V |
| Qg Gate Charge | - | 41 nC | 30.6 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 250 W | 195 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 21.46 mm | - |
| Length | - | 16.26 mm | - |
| Series | - | IXTH1N250 | - |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Type | - | Power MOSFET | - |
| Width | - | 5.3 mm | - |
| Forward Transconductance Min | - | 1 mS | - |
| Fall Time | - | 39 ns | 60 ns |
| Rise Time | - | 25 ns | 35 ns |
| Typical Turn Off Delay Time | - | 132 ns | 78 ns |
| Typical Turn On Delay Time | - | 69 ns | 22 ns |