| PartNumber | IXGH16N170 | IXGH16N170A | IXGH16N170AH1 |
| Description | IGBT Transistors 32 Amps 1700 V 3.5 V Rds | IGBT Transistors 32 Amps 1700 V 5 V Rds | IGBT Transistors 11 Amps 1700V 5 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBTs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247AD-3 | TO-247AD-3 | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1.7 kV | 1.7 kV | - |
| Collector Emitter Saturation Voltage | 2.7 V | 4.2 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | +/- 20 V |
| Continuous Collector Current at 25 C | 32 A | 16 A | - |
| Pd Power Dissipation | 190 W | 190 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | IXGH16N170 | IXGH16N170 | IXGH16N170 |
| Packaging | Tube | Tube | Bulk |
| Continuous Collector Current Ic Max | 80 A | 40 A | 16 A |
| Height | 21.46 mm | 21.46 mm | - |
| Length | 16.26 mm | 16.26 mm | - |
| Operating Temperature Range | - 55 C to + 150 C | - 55 C to + 150 C | - |
| Width | 5.3 mm | 5.3 mm | - |
| Brand | IXYS | IXYS | - |
| Continuous Collector Current | 32 A | 16 A | - |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |
| Package Case | - | - | TO-247-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247AD (IXGH) |
| Power Max | - | - | 190W |
| Reverse Recovery Time trr | - | - | 230ns |
| Current Collector Ic Max | - | - | 16A |
| Voltage Collector Emitter Breakdown Max | - | - | 1700V |
| IGBT Type | - | - | NPT |
| Current Collector Pulsed Icm | - | - | 40A |
| Vce on Max Vge Ic | - | - | 5V @ 15V, 11A |
| Switching Energy | - | - | 900μJ (off) |
| Gate Charge | - | - | 65nC |
| Td on off 25°C | - | - | 36ns/160ns |
| Test Condition | - | - | 850V, 16A, 10 Ohm, 15V |
| Collector Emitter Voltage VCEO Max | - | - | 1700 V |