| PartNumber | IXFT60N65X2HV | IXFT60N50P3 | IXFT60N25Q |
| Description | MOSFET 650V/60A TO-268HV | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | MOSFET 60 Amps 250V 0.047 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-268HV-3 | TO-268-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 500 V | - |
| Id Continuous Drain Current | 60 A | 60 A | - |
| Rds On Drain Source Resistance | 52 mOhms | 100 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 5 V | - |
| Vgs Gate Source Voltage | 10 V | 30 V | - |
| Qg Gate Charge | 108 nC | 96 nC | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 780 W | 1040 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Series | 650V Ultra Junction X2 | IXFT60N50 | IXFT60N25 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 23 S | 60 S, 35 S | - |
| Fall Time | 12 ns | 8 ns | 25 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 23 ns | 16 ns | 60 ns |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 63 ns | - | 80 ns |
| Typical Turn On Delay Time | 30 ns | - | 27 ns |
| Unit Weight | - | 0.229281 oz | 0.158733 oz |
| Package Case | - | - | TO-268-2 |
| Pd Power Dissipation | - | - | 360 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 60 A |
| Vds Drain Source Breakdown Voltage | - | - | 250 V |
| Rds On Drain Source Resistance | - | - | 47 mOhms |