IXFN32N1

IXFN32N100P vs IXFN32N100Q3 vs IXFN32N120

 
PartNumberIXFN32N100PIXFN32N100Q3IXFN32N120
DescriptionMOSFET 32 Amps 1000V 0.32 RdsMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28ATrans MOSFET N-CH Si 1.2KV 32A 4-Pin SOT-227B
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleChassis MountChassis Mount-
Package / CaseSOT-227-4SOT-227-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV1 kV-
Id Continuous Drain Current27 A28 A-
Rds On Drain Source Resistance320 mOhms320 mOhms-
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge225 nC195 nC-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation690 W780 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height12.22 mm--
Length38.23 mm--
SeriesIXFN32N100IXFN32N1003-
Transistor Type1 N-Channel1 N-Channel-
TypePolar Power MOSFET HiPerFET--
Width25.42 mm--
BrandIXYSIXYS-
Forward Transconductance Min13 S--
Fall Time43 ns--
Product TypeMOSFETMOSFET-
Rise Time55 ns300 ns-
Factory Pack Quantity1010-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time76 ns--
Typical Turn On Delay Time50 ns--
Unit Weight1.058219 oz1.058219 oz-
निर्माता भाग # विवरण RFQ
Littelfuse
Littelfuse
IXFN32N120P MOSFET 32 Amps 1200V
IXFN32N100P MOSFET 32 Amps 1000V 0.32 Rds
IXFN32N100Q3 MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
IXFN32N120 Trans MOSFET N-CH Si 1.2KV 32A 4-Pin SOT-227B
IXFN32N120P MOSFET N-CH 1200V 32A SOT-227B
IXFN32N100P MOSFET N-CH 1000V 27A SOT-227B
IXFN32N100Q3 IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
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