IXFH21

IXFH21N50 vs IXFH21N50F vs IXFH21N50Q

 
PartNumberIXFH21N50IXFH21N50FIXFH21N50Q
DescriptionMOSFET 500V 21AMOSFET N-CH 500V 21A TO247MOSFET 21 Amps 500V 0.25 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-247-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current21 A--
Rds On Drain Source Resistance250 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation300 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHyperFET-HyperFET
PackagingTube-Tube
Height21.46 mm--
Length16.26 mm--
SeriesIXFH21N50-IXFH21N50
Transistor Type1 N-Channel-1 N-Channel
Width5.3 mm--
BrandIXYS--
Forward Transconductance Min21 S--
Fall Time30 ns-12 ns
Product TypeMOSFET--
Rise Time33 ns-28 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns-51 ns
Typical Turn On Delay Time16 ns-25 ns
Unit Weight0.229281 oz-0.229281 oz
Package Case--TO-247-3
Pd Power Dissipation--280 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--21 A
Vds Drain Source Breakdown Voltage--500 V
Rds On Drain Source Resistance--250 mOhms
निर्माता भाग # विवरण RFQ
Littelfuse
Littelfuse
IXFH21N50 MOSFET 500V 21A
IXFH21N50F MOSFET N-CH 500V 21A TO247
IXFH21N50Q MOSFET 21 Amps 500V 0.25 Rds
IXFH21N50 MOSFET 500V 21A
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