IXFA6N

IXFA6N120P vs IXFA6N120P-TRL vs IXFA6N120P TRL

 
PartNumberIXFA6N120PIXFA6N120P-TRLIXFA6N120P TRL
DescriptionMOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6AMOSFET IXFA6N120P TRL
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1.2 kV--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance2.75 Ohms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge92 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 W--
Channel ModeEnhancement--
TradenameHiPerFET--
PackagingTubeReel-
Height4.83 mm--
Length9.65 mm--
SeriesIXFA6N120POLAR-
TypePolar HiPerFET Power MOSFET--
Width10.41 mm--
BrandIXYSIXYS-
Forward Transconductance Min3 S--
Fall Time14 ns--
Product TypeMOSFETMOSFET-
Rise Time11 ns--
Factory Pack Quantity50800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time24 ns--
Unit Weight0.081130 oz--
निर्माता भाग # विवरण RFQ
Littelfuse
Littelfuse
IXFA6N120P MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A
IXFA6N120P-TRL MOSFET IXFA6N120P TRL
IXFA6N120P MOSFET N-CH 1200V 6A D2PAK
IXFA6N120P-TRL MOSFET N-CH 1200V 6A D2PAK
IXFA6N120P TRL नयाँ र मौलिक
Top