| PartNumber | IXDP20N60BD1 | IXDP20N60B | IXDP35N60B |
| Description | IGBT Transistors 20 Amps 600V | IGBT Transistors 20 Amps 600V | IGBT Transistors 35 Amps 600V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 2.2 V | 2.2 V | 2.1 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 32 A | 32 A | - |
| Pd Power Dissipation | 140 W | 140 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | IXDP20N60B | IXDP20N60B | IXD_35N60 |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 40 A | 40 A | 60 A |
| Height | 16 mm | 16 mm | 9.15 mm |
| Length | 10.66 mm | 10.66 mm | 10.66 mm |
| Operating Temperature Range | - 55 C to + 150 C | - 55 C to + 150 C | - |
| Width | 4.82 mm | 4.82 mm | 4.82 mm |
| Brand | IXYS | IXYS | IXYS |
| Continuous Collector Current | 32 A | 32 A | 60 A |
| Gate Emitter Leakage Current | 500 nA | 500 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.081130 oz | 0.081130 oz | 0.081130 oz |