IXD

IXDR30N120D1 vs IXDR35N60BD1 vs IXDR35N60CD1

 
PartNumberIXDR30N120D1IXDR35N60BD1IXDR35N60CD1
DescriptionIGBT Transistors 30 Amps 1200VIGBT Transistors 35 Amps 600V
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseISOPLUS247-3ISOPLUS-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1.2 kV600 V-
Collector Emitter Saturation Voltage2.4 V2.2 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C50 A38 A-
Pd Power Dissipation200 W125 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXDR30N120IXDR35N60B-
PackagingTubeTube-
Continuous Collector Current Ic Max60 A48 A-
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
Operating Temperature Range- 55 C to + 150 C- 55 C to + 150 C-
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Continuous Collector Current50 A38 A-
Gate Emitter Leakage Current500 nA500 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
TradenameISOPLUS--
Unit Weight0.186952 oz0.186952 oz-
  • बाट सुरु गर्नुहोस्
  • IXD 407
निर्माता भाग # विवरण RFQ
Littelfuse
Littelfuse
IXDR35N60BD1 IGBT Transistors 35 Amps 600V
IXDR30N120D1 IGBT Transistors 30 Amps 1200V
IXDR35N60BD1 IGBT Transistors 35 Amps 600V
IXDR35N60CD1 नयाँ र मौलिक
IXDS404SI नयाँ र मौलिक
IXDS630SI नयाँ र मौलिक
IXDSEP12-12A नयाँ र मौलिक
IXDT30N120D1 नयाँ र मौलिक
IXDS430SI IC DRVR MOSF/IGBT 30A 28-SOIC
IXDS502D1B IC GATE LS DRVR SGL 2A 6-DFN
IXDT30N120 IGBT 1200V 60A 300W TO268AA
IXDR502D1B IC GATE LS DRVR SGL 2A 6-DFN
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