IRLW63

IRLW630ATM vs IRLW630A vs IRLW630ATM F630NS

 
PartNumberIRLW630ATMIRLW630AIRLW630ATM F630NS
DescriptionMOSFET 200V N-Channel a-FET Logic Level
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance400 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min4.5 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time6 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.011640 oz--
निर्माता भाग # विवरण RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
IRLW630ATM MOSFET 200V N-Channel a-FET Logic Level
IRLW630A नयाँ र मौलिक
ON Semiconductor
ON Semiconductor
IRLW630ATM MOSFET N-CH 200V 9A I2PAK
IRLW630ATM F630NS नयाँ र मौलिक
IRLW630ATRRPBF नयाँ र मौलिक
Top